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當(dāng)前位置：首頁(yè) > 產(chǎn)品中心 > 二維材料 > 硒化物晶體 > p-type MoSe2 crystals P型二硒化鉬晶體
簡(jiǎn)要描述：More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless MoSe2 crystals.
更新時(shí)間：2024-06-03產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家訪 問(wèn) 量：660詳細(xì)介紹
More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless MoSe2 crystals. Our p-type MoSe2 crystals are doped with Nb atoms at 1E17-5E18cm-3 range. These electronically doped vdW MoSe2 crystals are treated as gold standards in 2D materials field. MoSe2 crystals from 2Dsemiconductors are known for its superior valleytronic performance, perfect crystallization, defect free structure, extremely narrow PL bandwidths, clean PL spectra (free of bound exciton shoulders), and high carrier mobility. Thousands of scientific articles have cited us and used these crystals for scientific accuracy and clean signals. Please also see our n- and p-type MoSe2 crystals doped with Au, Re, Nb, or other transition metal atoms.
Please note that doping into TMDCs greatly reduce the crystallization time (growth speeds), thus electronically doped TMDCs measure smaller than undoped (intrinsic) TMDCs.
Single crystal p-doped MoSe2 characteristics
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