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硫硒化鉬晶體 MoSSe(Molybdenum Sulfide Diselenide)
晶體尺寸：~6毫米
電學性能：半導體
晶體結構：六邊形
晶胞參數：取決于合金成分：a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
Stoichiometric analysis of a single crystal MoSSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoSSe. Measurement was performed with a 785 nm Raman system at room temperature.
聯(lián)系人：陳谷一
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電話：021-56830191
