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InSe 硒化銦晶體 (Indium Selenide)

InSe (indium selenide) is the first commercially available InSe layered materials in the field. Our single crystal InSe crystals come with guaranteed optical, electronic, and structural anisotropy.

更新時(shí)間：2024-06-03

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SnSe 硒化錫晶體 (Tin Selenide)

In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers.

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p-type MoSe2 crystals P型二硒化鉬晶體

More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless MoSe2 crystals.

更新時(shí)間：2024-06-03

產(chǎn)品價(jià)格：8019.05

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GaSe 硒化鎵晶體 (Gallium Selenide)

Unlike other sources, our GaSe crystals are best suited towards electronic and optical applications in 2D materials field.

更新時(shí)間：2024-06-03

產(chǎn)品價(jià)格：7030.4

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GeSe 硒化鍺晶體 (Germanium Selenide)

Our single crystal GeSe (Germanium selenide) crystals come with guaranteed optical, electronic, and structural anisotropy.

更新時(shí)間：2024-06-03

產(chǎn)品價(jià)格：7359.95

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In2Se3 crystals 三硒化二銦晶體

In2Se3 single crystals were grown using Physical vapor transport (PVT) as well as Bridgman technique. Unlike other In2Se3

更新時(shí)間：2024-06-03

產(chǎn)品價(jià)格：6810.7

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